发明名称 Chemical vapor deposition apparatus
摘要 A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.
申请公布号 US6814813(B2) 申请公布日期 2004.11.09
申请号 US20020132767 申请日期 2002.04.24
申请人 MICRON TECHNOLOGY, INC. 发明人 DANDO ROSS S.;CARPENTER CRAIG M.;CAMPBELL PHILIP H.;MARDIAN ALLEN P.
分类号 C23C16/44;C23C16/455;C23C16/54;(IPC1-7):C23C16/00 主分类号 C23C16/44
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