| 摘要 |
PURPOSE: A semiconductor memory device capable of reducing a peak current during a refresh operation is provided to reduce the peak current generated during the refresh operation and thus to reduce noise during the refresh operation. CONSTITUTION: According to the semiconductor memory device comprising N word lines in correspondence to an input row address, the first cell mat(500) comprises a part of word lines among the N word lines. The second cell mat(600) comprises the other word lines among the N word lines. A data access control unit(800) enables word lines comprised in the first cell mat or the second cell mat in correspondence to a selected row address during data access, and enables each word line in the first cell mat and the second cell mat in correspondence to the selected row address during a refresh operation. A bank control unit(700) enables the first cell mat and the second cell mat in correspondence to an input bank address.
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