发明名称 |
Method for fabricating multiple-plane FinFET CMOS |
摘要 |
The present invention provides FinFETs on the same substrate utilizing various crystal planes for FET current channels in order to optimize mobility and/or to reduce mobility. An embodiment of the present invention provides a substrate having a surface oriented on a first crystal plane that enables subsequent crystal planes for channels to be utilized. A first transistor is also provided having a first fin body. The first fin body has a sidewall forming a first channel, the sidewall oriented on a second crystal plane to provide a first carrier mobility. A second transistor is also provided having a second fin body. The second fin body has a sidewall forming a second channel, the sidewall oriented on a third crystal plane to provide a second carrier mobility that is different from the first carrier mobility.
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申请公布号 |
US6815277(B2) |
申请公布日期 |
2004.11.09 |
申请号 |
US20030645063 |
申请日期 |
2003.08.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FRIED DAVID M.;NOWAK EDWARD J. |
分类号 |
H01L21/336;H01L21/84;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):H01L21/823;H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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