| 发明名称 |
Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers |
| 摘要 |
A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O3 comprises placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber.
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| 申请公布号 |
US6815374(B2) |
申请公布日期 |
2004.11.09 |
| 申请号 |
US20030457298 |
申请日期 |
2003.06.09 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
IYER RAVI |
| 分类号 |
C03C17/02;C23C16/02;C23C16/40;C23C16/56;H01L21/316;H01L21/4763;H01L21/768;(IPC1-7):C23C16/40 |
主分类号 |
C03C17/02 |
| 代理机构 |
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