发明名称 |
Method of fabricating a ferroelectric memory device |
摘要 |
A ferroelectric memory device and a method of fabricating the same are provided. The ferroelectric memory device includes at least two capacitor patterns and a plate line. Each of the capacitor patterns includes a lower electrode, a ferroelectric layer, and an upper electrode that are stacked on a semiconductor substrate. A top of the plate line is covered with an oxygen barrier layer, and a sidewall of the plate line is covered with an oxygen barrier spacer.
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申请公布号 |
US6815227(B2) |
申请公布日期 |
2004.11.09 |
申请号 |
US20030744378 |
申请日期 |
2003.12.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AN HYEONG-GEUN |
分类号 |
H01L27/105;H01L21/02;H01L21/8246;H01L27/115;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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