Light emitting semiconductor device with GaInNAs active layers and GaAs spacer layers

摘要

A light emitting semiconductor device, which includes a Ga0.9In0.1As0.97 active layer disposed between lower n-Ga0.5In0.5P and upper p-Ga0.5In0.5P cladding layers, being provided with lower and upper GaAs spacing layers each intermediate the active layer and the cladding layer. The active layer is approximately lattice-matched to a GaAs substrate and has a thickness of about 0.1 mum with a photoluminescence peak wavelength of approximately 1.3 mum, and the GaAs spacing layers each have a thickness of about 2 nm.