发明名称 |
Support-integrated donor wafers for repeated thin donor layer separation |
摘要 |
Processes that may be used in producing electronic, opotoelectronic, or optical components may be provided. The processes may involve preparing a reusable donor wafer for donating a thin layer of semiconductor material by assembling a donor layer of a semiconductor material having a thickness of plural thin layers onto a support layer of. The semiconductor material for the support layer may be selected to be less precious or to have a lower quality than the donor layer. The support layer may have sufficient mechanical characteristics for supporting the donor layer during desired semiconductor processing treatments.
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申请公布号 |
US6815309(B2) |
申请公布日期 |
2004.11.09 |
申请号 |
US20020327790 |
申请日期 |
2002.12.23 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. |
发明人 |
LETERTRE FABRICE;MAURICE THIBAUT |
分类号 |
H01L21/02;H01L21/20;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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