发明名称 |
METHOD FOR FABRICATING HAFNIUM SILICATE GATE INSULATION LAYER OF SEMICONDUCTOR DEVICE TO IMPROVE ADAPTABILITY OF HAFNIUM SILICATE THIN FILM |
摘要 |
PURPOSE: A method for fabricating a hafnium silicate gate insulation layer of a semiconductor device is provided to improve adaptability of a hafnium silicate thin film used as a gate insulation layer by rapidly and repeatedly forming a hafnium silicate thin film of a desired composition. CONSTITUTION: Vapor pressure of compound raw material gas of silicon alkoxid, hafnium halide or hafnium amido is controlled to be 0.1-2 torr at the pressure of a reactor of 0.1-2 torr, so that the raw material gas comes in contact with a substrate heated to 250-500 deg.C to chemically deposit an atomic layer.
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申请公布号 |
KR20040094201(A) |
申请公布日期 |
2004.11.09 |
申请号 |
KR20030028198 |
申请日期 |
2003.05.02 |
申请人 |
POSTECH FOUNDATION |
发明人 |
KANG, SANG U;KIM, WON GYU;LEE, SI U |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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主权项 |
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地址 |
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