发明名称 |
Method for manufacturing semiconductor device having increased effective channel length |
摘要 |
In one embodiment, a plurality of gate structures including gate electrodes and insulating layers covering the gate electrodes are formed on a semiconductor substrate. Impurity ions at a low dose for forming a source/drain region are implanted into the semiconductor substrate, using the gate structures as a mask. First insulating spacers are formed on the sidewalls of the gate structures and second insulating spacers are formed on the first insulating spacers. Thereafter, impurity ions at a high dose are implanted into the semiconductor substrate, using the first and second insulating spacers as a mask. Then, the second insulating spacers are removed. Therefore, contact resistance and characteristics of the transistors can be improved by adjusting an effective channel length and contact areas.
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申请公布号 |
US6815300(B2) |
申请公布日期 |
2004.11.09 |
申请号 |
US20030427172 |
申请日期 |
2003.04.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG HONG-SIK;KIM KI-NAM;HWANG YOO-SANG |
分类号 |
H01L21/28;H01L21/311;H01L21/336;H01L21/60;H01L21/768;H01L21/8242;H01L27/108;H01L29/78;(IPC1-7):H01L21/336;H01L21/425;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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