发明名称 Rinsing solution for lithography and method for processing substrate with the use of the same
摘要 The present invention provides a rinsing solution for lithography with which finely processed parts of a resist pattern can be well rinsed without corroding a metallic film made of Al, Al-Si, Al-Si-Cu, etc. and which is economically advantageous and has a high safety; and a method for processing a substrate with the use of the same. The rinsing solution contains at least one selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether and ethyl lactate.
申请公布号 US6815151(B2) 申请公布日期 2004.11.09
申请号 US20010877124 申请日期 2001.06.11
申请人 TOKYO OHIKA KOGYO CO., LTD. 发明人 TANABE MASAHITO;WAKIYA KAZUMASA;KOBAYASHI MASAKAZU;NAKAYAMA TOSHIMASA
分类号 G03F7/42;(IPC1-7):G03F7/42 主分类号 G03F7/42
代理机构 代理人
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