MULTI-ROW DRIVER CAPABLE OF USING FULL PAGE MODE

摘要

PURPOSE: A multi-row driver is provided to increase usability of a memory device in a graphic application using a full page mode by increasing page depth of the contents stored in and retrieved from the memory device. CONSTITUTION: A multi-row driver is used in a semiconductor memory device having a plurality of memory cell array blocks. The multi-row driver includes a plurality of row decoders(20), a global column decoder line, a plurality of bit line sense amplifier arrays, and a plurality of input/output sense amplifiers(10). The row decoders enable one word line per every other cell array blocks in one row address. The global column decoder line receives a column address to access each of the enabled word lines(30) simultaneously. The bit line sense amplifier arrays are coupled with the memory cell array blocks and transfer the data accessed by the global column decoder line to an input/output terminal. The input/output sense amplifiers are coupled with both ends of the memory cell array blocks and amplify the output of a plural bit line sense amplifier arrays under control of a block select signal.