发明名称 SEMICONDUCTOR MEMORY DEVICE AND ITS OPERATION METHOD, ESPECIALLY COMPARING MARINE OF A SENSE AMP
摘要 PURPOSE: A semiconductor memory device and its operation method are provided to increase accuracy of a read operation or a refresh operation and also to improve reliability of the device by increasing a comparison margin of a sense amp. CONSTITUTION: A normal word line block includes a number of normal word lines(NWL) connected to memory cells. A redundant word line block includes a number of redundant word lines(RWL) to replace a defective normal word line connected to the defective memory cell. And a decoder selects one normal word line among the normal word lines according to an address signal, and selects the defective normal word line and a redundant word line at the same time when the defective normal word line is selected.
申请公布号 KR20040093837(A) 申请公布日期 2004.11.09
申请号 KR20030027678 申请日期 2003.04.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, GUK SEON;CHUNG, JIN YONG
分类号 G11C11/406;G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C11/406
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