发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND ITS OPERATION METHOD, ESPECIALLY COMPARING MARINE OF A SENSE AMP |
摘要 |
PURPOSE: A semiconductor memory device and its operation method are provided to increase accuracy of a read operation or a refresh operation and also to improve reliability of the device by increasing a comparison margin of a sense amp. CONSTITUTION: A normal word line block includes a number of normal word lines(NWL) connected to memory cells. A redundant word line block includes a number of redundant word lines(RWL) to replace a defective normal word line connected to the defective memory cell. And a decoder selects one normal word line among the normal word lines according to an address signal, and selects the defective normal word line and a redundant word line at the same time when the defective normal word line is selected.
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申请公布号 |
KR20040093837(A) |
申请公布日期 |
2004.11.09 |
申请号 |
KR20030027678 |
申请日期 |
2003.04.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI, GUK SEON;CHUNG, JIN YONG |
分类号 |
G11C11/406;G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C11/406 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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