发明名称 OPERATIONAL TRANSCONDUCTANCE AMPLIFIER, PREVENTING LINEARITY DISTORTION DUE TO REDUCTION OF ELECTRON MIGRATION
摘要 PURPOSE: An operational transconductance amplifier is provided to improve a lowering effect of linearity due to reduction of electron migration of an input transistor channel by improving the electron migration. CONSTITUTION: A first input transistor includes a gate for receiving a first input voltage and a source connected to a ground voltage source. A second input transistor includes a gate for receiving a second input voltage and a source connected to the ground voltage source. A first voltage clamp circuit(21) includes a first terminal connected a drain of the first input transistor. A first current source is connected between a supply voltage and a second terminal of the first voltage clamp circuit in order to supply the current to the first voltage clamp circuit. A second voltage clamp circuit(22) includes a first terminal connected to a drain of the second input transistor. A second current source is connected between a supply voltage and a second terminal of the second voltage clamp circuit in order to supply the current to the second voltage clamp circuit. A first migration compensation circuit(23) is connected between the first terminal connected to the gate of the first input transistor and the second terminal of the second voltage clamp circuit. A second migration compensation circuit(24) is connected between the first terminal connected to the gate of the second input transistor and the second terminal of the first voltage clamp circuit. A first output signal is generated from the second terminal of the first voltage clamp circuit. A second output signal is generated from the second terminal of the second voltage clamp circuit.
申请公布号 KR20040094242(A) 申请公布日期 2004.11.09
申请号 KR20030028317 申请日期 2003.05.02
申请人 ADVANCED MEDIA TECHNOLOGY CO., LTD. 发明人 JUNG, BYEONG GUK;KIM, GYU HO
分类号 H03F3/45;(IPC1-7):H03F3/45 主分类号 H03F3/45
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