| 摘要 |
PURPOSE: A method for forming a storage node contact is provided to improve SAC(Self-Aligned Contact) margin by forming the storage node contact with hole type instead of line type. CONSTITUTION: A first interlayer dielectric(2) having a poly plug is formed on a substrate(1). A conductive layer(4) and a nitride layer(5) as a hard mask are sequentially deposited on the first interlayer dielectric. By patterning the nitride layer and the conductive layer, bit lines(6) are formed. A second interlayer dielectric(7) and an anti-reflective coating are formed on the resultant structure. Contact holes(10) are formed to expose the poly plug. The remaining anti-reflective coating is removed. A spacer(11) is formed at both sidewalls of the contact holes. A storage node contact(12) of hole type is then formed by filling a polysilicon layer in the contact hole and by etch-back of the polysilicon layer.
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