METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING HIGH-PERMITTIVITY MATERIAL TO RESTRAIN LEAKAGE CURRENT

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to restrain leakage current due to direct tunneling of SiO2 by using HfO2 as high-permittivity material instead of SiO2. CONSTITUTION: An Hf thin film is formed on a silicon substrate(21) by sputtering. The Hf thin film is oxidized by oxidation processing and annealing, thereby forming a gate oxide layer(27) composed of an HfSixOy (where, x is 0.4-0.6 and y is 1.5-2.5) thin film(25) and an HfO2 thin film(23a) on the silicon substrate.