| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to minimize junction area and to reduce junction leakage by using a localized channel. CONSTITUTION: A photoresist pattern is formed on a silicon substrate having a field oxide layer(102) and a well(106) in order to open a portion of the field oxide layer. The exposed field oxide layer is removed, and an epitaxial silicon layer is grown on the removed region. A groove is formed by partially etching the epitaxial silicon layer adjacent to the well. An oxide layer is filled in the groove so as to isolate a channel edge portion.
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