METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE TO STABLY FORM BARRIER LAYER OF METAL INTERCONNECTION BY SIMPLE PROCESS AND STABILIZE CONTACT RESISTANCE

摘要

PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to stably form a barrier layer of a metal interconnection by a simple process and stabilize contact resistance by inserting a reaction control layer into a Ti layer to be used as a barrier metal layer or a intermetal adhesion layer to control a reaction of TiSix or TiNx and by performing an RTP(rapid thermal process) at a single temperature. CONSTITUTION: A substrate(11) having a contact hole is prepared. The first titanium layer(13a) is formed on the resultant structure. A titanium nitride layer(13e) or a titanium oxide layer is formed as a reaction control layer(13b) on the first titanium layer. The second titanium layer(13c) is formed on the reaction control layer. An RTP is performed in an atmosphere of ammonia or nitrogen to make the first titanium layer react with the substrate or a metal layer(14) formed on the substrate so that a titanium silicide layer(13d) or a titanium metal compound layer is formed in the base part of the contact hole while the second titanium layer is transformed into a titanium nitride layer. A metal layer is deposited to fill the contact hole.