发明名称 |
FLASH MEMORY HAVING PRE-DETECTION FOR DATA LOSS TO PREVENT DATA RETENTION ERRORS IN NON-VOLATILE MEMORY DEVICE |
摘要 |
PURPOSE: A flash memory having pre-detection for data loss to prevent data retention errors in a non-volatile memory device is provided to enhance the efficiency and the productivity by detecting and correcting weakly programmed cells. CONSTITUTION: A plurality of non-volatile memory cells are provided. A unit for reading a selected cell by comparing the performance of the selected cell with the performance of a reference cell is provided. A first read state is obtained by reading the selected cell with the reference cell biased to a first value(65). A second read state is obtained by reading the selected cell with the reference cell biased to a second value greater than the first value(70). The selected cell is flagged as a weakly programmed and high cell if said first and second read states do not match(75). A third read state is obtained by reading the selected cell with the reference cell biased to a third value less than the first value(80). The selected cell is flagged as a weakly programmed and low cell if the first and third read states do not match(85). The selected cell is refreshed if the selected cell is weakly programmed(90).
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申请公布号 |
KR20040093470(A) |
申请公布日期 |
2004.11.05 |
申请号 |
KR20040029839 |
申请日期 |
2004.04.29 |
申请人 |
DIALOG SEMICONDUCTOR GMBH |
发明人 |
AAKJER THOMAS |
分类号 |
G01R31/28;G11C16/02;G11C16/06;G11C16/28;G11C16/34;G11C29/00;G11C29/24;(IPC1-7):G11C16/28 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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