发明名称 FLASH MEMORY HAVING PRE-DETECTION FOR DATA LOSS TO PREVENT DATA RETENTION ERRORS IN NON-VOLATILE MEMORY DEVICE
摘要 PURPOSE: A flash memory having pre-detection for data loss to prevent data retention errors in a non-volatile memory device is provided to enhance the efficiency and the productivity by detecting and correcting weakly programmed cells. CONSTITUTION: A plurality of non-volatile memory cells are provided. A unit for reading a selected cell by comparing the performance of the selected cell with the performance of a reference cell is provided. A first read state is obtained by reading the selected cell with the reference cell biased to a first value(65). A second read state is obtained by reading the selected cell with the reference cell biased to a second value greater than the first value(70). The selected cell is flagged as a weakly programmed and high cell if said first and second read states do not match(75). A third read state is obtained by reading the selected cell with the reference cell biased to a third value less than the first value(80). The selected cell is flagged as a weakly programmed and low cell if the first and third read states do not match(85). The selected cell is refreshed if the selected cell is weakly programmed(90).
申请公布号 KR20040093470(A) 申请公布日期 2004.11.05
申请号 KR20040029839 申请日期 2004.04.29
申请人 DIALOG SEMICONDUCTOR GMBH 发明人 AAKJER THOMAS
分类号 G01R31/28;G11C16/02;G11C16/06;G11C16/28;G11C16/34;G11C29/00;G11C29/24;(IPC1-7):G11C16/28 主分类号 G01R31/28
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