NON-VOLATILE SEMICONDUCTOR MEMORY TO IMPROVE RELIABILITY OF MEMORY OPERATION

摘要

PURPOSE: A non-volatile semiconductor memory is provided to improve reliability of a memory operation by performing an erase/write only on the data of a memory cell to be rewritable. CONSTITUTION: A plurality of the first cell units are composed of one memory cell and two select gate transistors formed at both sides of the one memory cell. A wordline is commonly connected to each memory cell of the plurality of the first cell units. A plurality of bitlines are respectively connected to the plurality of the first cell units. A plurality of sense amplifiers are correspondingly installed in the plurality of bitlines. The plurality of the first cell units are divided into a plurality of blocks. In an erase operation, an erase circuit sets the potential of the plurality of bitlines in a block unit.