| 摘要 |
<p>In a method of manufacturing a cold cathode field emission device, a cathode electrode 11 , an insulating layer 12 and a gate electrode 13 are formed; an opening portion 14 is formed through the gate electrode 13 and the insulating layer 12 to expose the cathode electrode 11 ; a resist-material layer 20 covering the side wall of the opening portion 14 , the gate electrode 13 and the insulating layer 12 is formed; the surface of the resist-material layer is modified to form a modified layer 21 ; an electron emitting portion 15 constituted of the thick-film-paste-material layer 22 is formed on the cathode electrode 11 positioned in the bottom portion of the opening portion 14 ; and then, the resist-material layer 20 is removed.</p> |
