| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for easily making a single crystal silicon film of a desired size at a desired position, by using a simple mask for crystallization. SOLUTION: The method for making a single crystal silicon film includes a step for forming a semiconductor layer or a metal thin film on a transparent or translucent board, a step for forming a single crystal seed area of a desired size on the board having the formed semiconductor layer or metal thin film by a crystallizing method using a laser irradiation process, and a step for transforming a desired area of the semiconductor layer or a metal thin film into a single crystal area, using the single crystal seed area as a seed for crystallization. COPYRIGHT: (C)2005,JPO&NCIPI
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