发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce current consumption on a self fresh mode. SOLUTION: This device is provided with refresh timers 26a, 26b whose issuance cycles of refresh requests PHYS1, PHYS2 are different from each other, and refresh address generation circuits 20a, 20b for generating refresh addresses according to the refresh requests. At a line selection circuit, setting is made as to which of the refresh addresses QAD1, QAD2 of different issuance cycles is used to select a word line for each line. The word lines are refreshed by different refresh cycles, only the word line of a pause refresh failure is refreshed by a short cycle, and the remaining word lines are refreshed by long cycles. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004310879(A) 申请公布日期 2004.11.04
申请号 JP20030101641 申请日期 2003.04.04
申请人 RENESAS TECHNOLOGY CORP 发明人 ARITOMI KENGO;INOUE YOSHINAGA
分类号 G11C11/401;G11C11/403;G11C11/406;(IPC1-7):G11C11/406 主分类号 G11C11/401
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