发明名称 SIBE-KRISTALL
摘要 Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5 x 10<-5> mm<3> or more in size. <IMAGE>
申请公布号 DE69920662(D1) 申请公布日期 2004.11.04
申请号 DE1999620662 申请日期 1999.11.05
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 ABE, TAKAO;YONENAGA, ICHIRO;IGARASHI, TETSUYA
分类号 C30B29/10;C30B15/00;H01L35/14 主分类号 C30B29/10
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