| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a hole or groove, which has the depth larger than 10μm, an approximately vertical cross section, various opening diameters, and a uniform depth, on a p-type silicon substrate in a simple manner and with a good yielding ratio. SOLUTION: The p-type silicon substrate 11, which has specific resistance not smaller than 0.5 ohm-cm and not larger than 1500 ohm-cm, is processed by the electrochemical etching as an anode in an electrolytic solution containing fluoride so that a family of fine holes 14 composed of fine holes having the depth not smaller than 10μm are formed on at least one surface of the p-type silicon substrate 11. Then, a protection film 15 having an aperture 16 for exposing at least two or more fine holes among the family of fine holes 14 is formed on the surface, which has the family of fine holes 14, of the p-type silicon substrate 11. And then, the surface, which has the family of fine holes 14, of the p-type silicon substrate 11 is processed by the chemical etching so that the respective fine holes are connected by removing the silicon 11 existing within the aperture 16 of the protection film 15. As a result, the hole or groove 17 is formed. COPYRIGHT: (C)2005,JPO&NCIPI
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