发明名称 |
TFT structure and method for manufacturing the same |
摘要 |
A thin film transistor (TFT) structure includes a substrate, a polysilicon structure including a plurality of channel regions, at least one lightly doped region and at least one heavily doped source/drain region, a plurality of gate structures, and an insulating layer formed between the gate structures and the polysilicon structure. The thickness of a first portion of the insulating layer under and between the gate structures is greater than the thickness of a second portion of the insulating layer adjacent to the first portion. At least one lightly doped region is formed under the first portion of the insulating layer and at least one heavily doped source/drain region is formed under the second portion of the insulating layer via the same doping procedure.
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申请公布号 |
US2004217356(A1) |
申请公布日期 |
2004.11.04 |
申请号 |
US20040834337 |
申请日期 |
2004.04.28 |
申请人 |
TOPPOLY OPTOELECTRONICS CORP. |
发明人 |
CHANG SHIH-CHANG;DENG DE-HUA;TSAI YAW-MING |
分类号 |
H01L29/423;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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