| 发明名称 |
Sputtering apparatus |
| 摘要 |
A sputtering apparatus for forming a film by a physical gas-phase growth on a substrate having a irregular or flat shape is provided including three or more axes for independently varying a relative positional relationship between a substrate and a cathode in the course of film formation.
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| 申请公布号 |
US2004216992(A1) |
申请公布日期 |
2004.11.04 |
| 申请号 |
US20040795315 |
申请日期 |
2004.03.09 |
| 申请人 |
ANDO KENJI;KANAZAWA HIDEHIRO |
发明人 |
ANDO KENJI;KANAZAWA HIDEHIRO |
| 分类号 |
G02B5/10;C23C14/22;C23C14/34;C23C14/50;G02B1/11;(IPC1-7):C23C14/32 |
主分类号 |
G02B5/10 |
| 代理机构 |
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