发明名称 |
Method to improve breakdown voltage by H2 plasma treat |
摘要 |
A new method is provided for the improvement of breakdown performance of a layer of dielectric and the removal of a layer of copper oxide (CuO) from copper interconnects. The formed layer of dielectric, thereby including a formed layer of CuO or Cu2O is, using the invention, exposed to a H2 plasma treatment. The H2 plasma treatment reduces the dielectric constant of the exposed and surrounding layer of low-k dielectric while at the same time removing the layer of CuO.
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申请公布号 |
US2004219795(A1) |
申请公布日期 |
2004.11.04 |
申请号 |
US20030427360 |
申请日期 |
2003.05.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. |
发明人 |
LI LIH-PING;BAO TIEN-I;JANG SYUN-MING |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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