| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve such a problem that a conversion efficiency of a former photoelectric converter using crystalline semiconductor particles is low. <P>SOLUTION: In the photoelectric converter comprising the steps of: arranging a plurality of first conductivity type crystalline semiconductor particles 3 on a substrate 1 as one electrode; forming a second conductivity type semiconductor layer 4 on the crystalline semiconductor particles 3; forming an insulator 2 between the crystalline semiconductor particles 3; and forming an upper part electrode layer 5, a lower portion coating thickness of the crystalline semiconductor particles 3 in the second conductivity type semiconductor layer 4 is formed thinner than a top portion coating thickness thereof. Thereby, a high conversion efficiency can be realized. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
