发明名称 PREPARATION METHOD FOR MAGNETOOPTIC GARNET THICK-FILM SINGLE CRYSTAL
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for preparing a magntooptic garnet thick-film single crystal with an insertion loss of 0.01 dB or less in a wavelength range of 1.3-1.6μm. <P>SOLUTION: The magnetooptic garnet thick-film single crystal is represented by the formula: (R,Bi)<SB>3</SB>(Fe,M)<SB>5</SB>O<SB>12</SB>(wherein R is at least one element selected from among Y and rare earth elements of Eu, Gd, Ho, and Yb; and M is at least either Al or Ga and its amount may be zero); and a preparation method therefor comprises the step of performing crystal growth on a single crystal substrate by a liquid-phase epitaxial growth method in an atmosphere with an oxygen concentration of 13-16% and the step of heat-treating the resultant magnetooptic garnet thick-film single crystal in an N<SB>2</SB>or Ar gas atmosphere containing H<SB>2</SB>. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004307224(A) 申请公布日期 2004.11.04
申请号 JP20030098921 申请日期 2003.04.02
申请人 NEC TOKIN CORP 发明人 ENDO KAZUMITSU
分类号 G02F1/09;C30B29/28;C30B33/02;(IPC1-7):C30B29/28 主分类号 G02F1/09
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