| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for driving a nonvolatile semiconductor storage device capable of storing multiple kinds of ternary or more information. <P>SOLUTION: The method for driving the nonvolatile semiconductor storage device comprizes: applying the first voltage of a first polarity to a control gate electrode disposed in each memory transistor 4 of K-th line so as to execute a writing operation for storing electrons in a floating gate electrode disposed in the memory transistor 4 of each memory cell 6 arranged at the K-th line (K is an integer to satisfy 1≤K≤N), applying the second voltage of a second polarity to a well 7, and applying voltages different from one another in size to bit lines B-0, B-1, B-2 and B-3 connected to each memory transistor 4 of the K-th line according to write data desired by each memory cell 6 of the K-th line. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
