| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a thin gate insulation film corresponding to high-speed driving can be formed by highly controlling the film thickness, and nitriding can be applied without penetrating to a semiconductor substrate; and a semiconductor device that is provided with a thin gate insulation film with the appropriate film quality, and wherein the semiconductor substrate is not nitrided at all. SOLUTION: A first oxide film 3 formed by thermal oxidation is partly removed by etching. The removed region 4 is allowed to be reacted with a hot nitric acid 7 so that a second oxide film 6 is formed. The oxide films 3 and 6 are nitrided by a low-energy nitride plasma 8 to make a first gate insulation film 11 and a second gate insulation film 12 as a oxynitride film, respectively. COPYRIGHT: (C)2005,JPO&NCIPI
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