| 摘要 |
PROBLEM TO BE SOLVED: To reduce the amount of a treatment gas used and improve the uniformity of the treatment in film formation conducted under a reduced pressure. SOLUTION: The prescribed amount of the treatment gas is stored in gas storages 23a and 23b in advance, and when a wafer W is treated, exhausting from a treatment container 2 is suspended and the treatment container 2 is filled with the prescribed amount of the treatment gas. Then, supply of the treatment gas is stopped, and with the treatment container 2 closed tightly, a film is formed on the wafer W by plasma using the treatment gas. Unlike the conventional treatment wherein a treatment is carried out with the treatment gas being kept flowing, a gas flow profile is never biased and a uniform treatment is available in a plane of the wafer. Moreover, a desired film can be formed with a minimum amount of the treatment gas. COPYRIGHT: (C)2005,JPO&NCIPI
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