METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL OF GROUP III ELEMENT, APPARATUS USED FOR THE SAME, AND NITRIDE SINGLE CRYSTAL OF GROUP III ELEMENT OBTAINED BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride single crystal, by which the decomposition of gallium nitride can be suppressed in a sublimation method, and the production efficiency is improved. SOLUTION: In the method for manufacturing the gallium nitride single crystal, comprising growing the gallium nitride single crystal on the surface of a substrate 3 by feeding a raw material (GaN powder) 2 of the gallium nitride (GaN) single crystal in a crucible 1, then heating the crucible so as to sublimate or evaporate the raw material, and utilizing that the sublimated or evaporated raw material recrystallizes when the temperature is again lowered on the surface of the substrate 3, the growth of the single crystal is performed under pressure. Preferable pressure is≥5 atm (5×1.013×105Pa). Preferably, the growth of the single crystal is performed in the atmosphere of a mixed gas of gaseous NH3and N2. COPYRIGHT: (C)2005,JPO&NCIPI