发明名称 Semiconductor memory device having advanced data strobe circuit
摘要 A data strobe circuit for prefetching M number of N bit data, N and M being a positive integer, includes a data strobe buffering unit for generating N number of align control signals based on a data strobe signal; a synchronizing block having M number of latch blocks, each for receiving N bit data and outputting the N-1 bit data in a parallel fashion in response to N-1 number of the align control signals and one bit prefetched data in response to the remaining align control signals; and a output block having M number of aligning blocks, each for receiving the N-1 bit data in the parallel fashion, synchronizing the N-1 bit data with the align control signal and outputting the synchronized N-1 bit data as the N-1 bit prefetched data.
申请公布号 US2004218424(A1) 申请公布日期 2004.11.04
申请号 US20030749353 申请日期 2003.12.31
申请人 KWEAN KI-CHANG 发明人 KWEAN KI-CHANG
分类号 G11C11/40;G11C7/10;G11C7/22;G11C11/4076;G11C11/4093;(IPC1-7):G11C7/00;G11C5/00 主分类号 G11C11/40
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