SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR
摘要
<p>An insulation film (24) having a gentle surface inclination is formed by a high-density plasma CVD method or a normal-pressure CVD method after a ferroelectric capacitor (23) is formed. Then, an alumina film (25) is formed on the insulation film (24). Such a method can positively protect the ferroelectric capacitor (23) despite the low coverage of the alumina film (25).</p>
