| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a microwave plasma treatment apparatus capable of depositing a uniform thin film on the substrate to be treated, and to provide a microwave plasma treatment method using the system. <P>SOLUTION: The microwave plasma treatment apparatus comprises: a fixing means of fixing a substrate as the object for treatment to the surface of a central axis in a plasma treatment chamber; an exhausting means of reducing the internal and external pressure in the substrate; a metallic gas feeding member for treatment located at the inside of the substrate and forming a semiaxially cylindrical resonance system with the plasma treatment chamber; a microwave introducing means of introducing microwaves into the plasma treatment chamber and performing treatment. The part of clamping the substrate in the fixing means is provided with a microwave sealing member, and the connection position of the microwave introducing means is the one weak in an electric field in an electric field strength distribution formed at the inside of the plasma treatment chamber. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
