发明名称 ELECTROSTATIC-DISCHARGE PROTECTION CIRCUIT USING FLASH CELL
摘要 PROBLEM TO BE SOLVED: To provide an electrostatic-discharge protection circuit which enhances ESD characteristics by ensuring a plurality of current paths that are uniform against high-voltage generation caused by an electrostatic charge, and enhances reliability of a semiconductor integrated circuit device to a higher level by ensuring the high ESD level. SOLUTION: The electrostatic-discharge protection circuit is constituted such that a plurality of flash cells are arranged, wherein each of the flash cells has a drain, a source, a control gate, and a floating gate, and in each of the flash cells, the drain/source current path is connected between an I/O pad and a grounding line while the control gate is connected to the I/O pad, and a resistor is connected between the floating gate of each flash cell and the grounding line. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004311981(A) 申请公布日期 2004.11.04
申请号 JP20040087073 申请日期 2004.03.24
申请人 HYNIX SEMICONDUCTOR INC 发明人 SHIM KEON SOO
分类号 H01L27/04;G11C16/00;H01L21/822;H01L27/02;H01L27/06;H02H9/00;(IPC1-7):H01L21/822 主分类号 H01L27/04
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