| 摘要 |
A low noise amplifier (LNA) includes first and second transistors, an inductor, and a first resistor. The gate of the first transistor is connected to an RF input node, the source being connected to a first ground node. The source of the second transistor is connected to the drain of the first transistor, the drain of the second transistor being connected to an RF output node and the gate being connected to a first bias voltage. The first resistor and the inductor are connected in parallel between the RF output node and a supply voltage. The first resistor is selected such that the LNA resonant frequency is greater than 1.5 times an operating frequency. In a CMOS circuit, the source of the transistor in the current mirror circuit, the first ground node, and the capacitor are each connected to ground through three separate ground paths having parasitic inductances provided by three off-chip bonding wires.
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