发明名称 Ridge waveguide type semiconductor laser
摘要 A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first electrode layer in contact with the semiconductor layer through an opening in the insulating film, and a second electrode layer on the first electrode layer having a stripe shape and extending along the waveguide. A distance from an end face of a resonator of the laser to an edge of the second electrode layer does not exceed 20 mum.
申请公布号 US2004218646(A1) 申请公布日期 2004.11.04
申请号 US20040799714 申请日期 2004.03.15
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MIHASHI YUTAKA;TAKIGUCHI TOHRU;TANAKA TOSHIO;KADOWAKI TOMOKO;HANAMAKI YOSHIHIKO;TOMITA NOBUYUKI
分类号 H01S5/00;H01S5/042;H01S5/062;H01S5/16;H01S5/22;H01S5/223;H01S5/343;(IPC1-7):H01S5/00 主分类号 H01S5/00
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