发明名称 |
Ridge waveguide type semiconductor laser |
摘要 |
A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first electrode layer in contact with the semiconductor layer through an opening in the insulating film, and a second electrode layer on the first electrode layer having a stripe shape and extending along the waveguide. A distance from an end face of a resonator of the laser to an edge of the second electrode layer does not exceed 20 mum.
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申请公布号 |
US2004218646(A1) |
申请公布日期 |
2004.11.04 |
申请号 |
US20040799714 |
申请日期 |
2004.03.15 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MIHASHI YUTAKA;TAKIGUCHI TOHRU;TANAKA TOSHIO;KADOWAKI TOMOKO;HANAMAKI YOSHIHIKO;TOMITA NOBUYUKI |
分类号 |
H01S5/00;H01S5/042;H01S5/062;H01S5/16;H01S5/22;H01S5/223;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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