发明名称 |
LIGHT EMITTING DEVICE AND LIGHTING DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device having high light extraction efficiency and obtaining diffused light. <P>SOLUTION: This light emitting device 10 is provided with: a light emitting diode including a multiple quantum well (MQW) light emitting layer 7; a photonic crystal that is formed on a p-type clad layer 9 of the light emitting diode and having periodically modulated dielectric constants in the inward direction of a surface comprising a p-type contact layer 11 having circular through holes 11a that are symmetrically arranged six times and a p-side electrode 12 embedded in the through holes 11a of the p-type contact layer 11; and a flat concave lens 50 as a means for diffusing the light from the light emitting diode that is formed through an n-side electrode 16 on the rear face of a GaN substrate 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004311973(A) |
申请公布日期 |
2004.11.04 |
申请号 |
JP20040076413 |
申请日期 |
2004.03.17 |
申请人 |
SANYO ELECTRIC CO LTD |
发明人 |
SHONO MASAYUKI;HATA MASAYUKI |
分类号 |
F21V29/00;F21S8/04;F21V5/04;F21V7/00;F21Y101/02;H01L33/06;H01L33/08;H01L33/22;H01L33/32;H01L33/36;H01L33/50;H01L33/58;H01L33/64 |
主分类号 |
F21V29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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