| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which prevents disconnection caused by current concentration. <P>SOLUTION: The light-emitting device comprises a current blocking layer 32 which is formed on a GaAs substrate 28 having a (100)-like face as a major face; and first and second extended portions 30, 31 of the current blocking layer 32, which are formed continuously from the current blocking layer 32 and extended substantially perpendicular to flat surfaces of the GaAs substrate 28, respectively. The current blocking layer 32 is provided thereon with an electrode layer 33 which consists of a bonding portion 29 formed on substantially a central portion, radial fine-line patterns 35, 36 connected to the bonding portion 29 and formed on the first and second extended portions 30, 31, respectively, of the current blocking layer 32, and an outer fine-line pattern conductor 37 formed on an ohmic contact layer around the current blocking layer 32. An end of the first extended portion 30 of the current blocking layer 32 terminates at a position closer to a central side without reaching the outer fine-line pattern 37, and the second extended portion 31 of the current blocking layer 32 is extendedly formed up to a lower portion of the conductor of the outer fine-line pattern 37. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
