| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make high-quality correction of a defect possible even in a fine region where an etching gas or a source gas of a light-shielding film can not be efficiently supplied, without causing decrease in transmittance due to a Ga stain or changes in physical properties due to changes in the element content of the light-shielding film. <P>SOLUTION: In correcting a white defect, the source material of a light-shielding film 4 in a liquid state is supplied from the probe 3 of a scanning probe microscope onto the white defect region by a similar method to Dip-Pen Nanolithography, and an ion beam, an electron beam or a laser beam 6 is supplied to decompose the source material 5 of the light-shielding film in the white defect region 8 to deposit a light-shielding film 7 in the white defect region to correct the white defect. Similarly in correcting a black defect, an etching source material in a liquid state is supplied from the probe of a scanning probe microscope onto only the black defect region by a similar method to Dip-Pen Nanolithography, and an ion beam or an electron beam is supplied to etch to correct the black defect. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
