发明名称 |
MASK BLANK FOR CHARGED PARTICLE BEAM EXPOSURE, AND METHOD FOR MANUFACTURING MASK |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask blank for charged particle beam exposure wherein struts high in dimensional accuracy are formed in a short time by using a method of largely reducing the cost, and to provide a method for manufacturing a mask. <P>SOLUTION: The method is for manufacturing a mask blank for charged particle beam exposure provided at least with a membrane 12 and with struts 14 for supporting the membrane 12, with an etch-stop layer 13 in between. For the formation of the struts 14, sandblasting is applied partway and then dry etching is performed as far as the etch-stop layer 13 for the completion of the struts 14. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2004311800(A) |
申请公布日期 |
2004.11.04 |
申请号 |
JP20030104762 |
申请日期 |
2003.04.09 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
MORIMOTO KENICHI;KUROSAWA HIDE;ARITSUKA YUKI |
分类号 |
B24C1/04;G03F1/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 |
主分类号 |
B24C1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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