发明名称 ELECTRODE PARTICULARLY SUITABLE FOR USE WITH MOLECULAR MEMORY AND LOGIC ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for platinum and other conductive electrodes for use in molecular films for a molecular electronic device. SOLUTION: A manufacturing method is provided for a molecular electronic device (10) composed of at least a bottom electrode (14) and a molecular switch film (16) located on the electrode. The method includes the formation of a bottom electrode (12) by a method including a step to clean the part of a substrate (12) to which the bottom electrode (14) is attached (36b), a step to perform presputtering on the part (36c), and a step to attach a conductive layer (14) at least to the part. The conductive electrode (14) shows advantageous properties such as a low or controlled oxide formation (or probably in passive state), high melting point, high bulk modulus, and low diffusion coefficient. Smooth adhesive thin film surface is further useful to SAM adhesion. Due to metallic nature, highly conductive connection can be provided to molecules. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004312011(A) 申请公布日期 2004.11.04
申请号 JP20040109124 申请日期 2004.04.01
申请人 HEWLETT-PACKARD DEVELOPMENT CO LP 发明人 BECK PATRICIA A;OHLBERG DOUGLAS;STEWART DUNCAN;LI ZHIYONG
分类号 H01L21/28;G11C13/02;H01L21/285;H01L27/28;H01L29/06;(IPC1-7):H01L21/28 主分类号 H01L21/28
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