| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be manufactured on wafer level without using conductive adhesive. SOLUTION: A semiconductor device can be manufactured on wafer level by providing a step for forming a first electrode on the first major surface of a semiconductor wafer by plating a first metal layer, a step for forming a trench by dicing a semiconductor element to leave the first metal layer, a step for forming a bump on the second major surface of the semiconductor element and thermocompressing the bump and a metal layer, e.g. a metal plate, to form an electrode, a step for filling the trench with sealing resin, and a step for dicing resin between the substrate and the semiconductor element at once into pieces of semiconductor element. COPYRIGHT: (C)2005,JPO&NCIPI |
