CMOS IMAGE SENSOR WITH ETCH STOP LAYER USED IN FUSE OPEN PROCESSING AND FUSE REPAIR METHOD USING THE SAME

摘要

PURPOSE: A CMOS image sensor and a method for repairing a fuse are provided to enhance yield and to simplify process by using a titanium nitride layer used as an electrode of an MIM(Metal Insulator Metal) capacitor as an etch stop layer of a fuse region. CONSTITUTION: A first conductive layer(21a,21b) is formed on a fuse region and a circuit region of a substrate. A first interlayer dielectric(25) is formed on the resultant structure. A second conductive layer(26) used as a first electrode of a capacitor is formed on the circuit region. A dielectric film(28) and a titanium nitride layer(29) are formed on the second conductive layer and the first interlayer dielectric of the fuse region. A second interlayer dielectric(34) having an interconnection on the circuit region is formed on the resultant structure.