| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has no decline in bonding strength and thereby has a high reliability and a high yield. <P>SOLUTION: The semiconductor device comprises a semiconductor substrate 1, a first insulation layer 4 formed on top of the semiconductor substrate 1, a Cu wiring layer 2 having a prescribed pattern which is embedded in the first insulation layer 4 in such a manner that the top face may be essentially flush with that of the first insulation layer 4, a pad metal layer 6 having a prescribed pattern which is formed on top of the first insulation layer 4 and the Cu wiring layer 2 and is electrically connected with the Cu wiring layer 2, and a second insulation layer 8 for covering these layers. The semiconductor device is also provided with an opening 9 which is formed from the front surface of the second insulation layer 8 and reaches the pad metal layer 6. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
