| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a slurry for polishing which has excellent polishing capability for a thin film for a multilayer interconnection formed on the surface of an electronic part substrate made of a silicon, a gallium arsenide, etc., which can polish at a high polishing speed without denaturing the thin film and in which the thin film after polishing has a high flattening degree. <P>SOLUTION: When an unshaped colloidal silica whose ratio (major axis/minor axis) of a major axis to a minor axis is 1.2-5.0, is used under acidity, excellent polishing capability is performed for the thin film for the multilayer interconnection, and the thin film is not denatured. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
