| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic RAM(random access memory) element proper for increasing a sensitivity tolerance and integration of a sensing amplifier. SOLUTION: The magnetic RAM element includes main array portions A1, A2 and a reference cell array portion B. The main array portions A1, A2 have a plurality of main cells located along a line and column in two dimensions, and they have a reference access transistor and main magnetic resistor 40a connected connected in series respectively. The reference cell array portion B has a plurality of reference cells located in a direction of column in one dimension. and they have a reference access transistor and reference magnetic resistor 40b connected in series respectively. The main magnetic resistor 40a is arrayed in one direction on plane, and the reference magnetic resistor 40b is arrayed so as to intersect it, therefore, each of the reference magnetic resistors 40b always have a value between the maximum and minimum of the main magnetic resistor 40a. COPYRIGHT: (C)2005,JPO&NCIPI
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