发明名称 |
Surface emitting semiconductor laser and manufacturing method thereof |
摘要 |
There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high efficiency, and high speed response and a method for manufacturing the surface emitting semiconductor laser. Five holes are formed on the top surface of an upper multilayer reflection film formed in the shape of a post by the use of a focused ion beam (FIB) processing unit. One hole is formed on the surface of an upper multilayer reflection film corresponding to the center position of a square current injection region which is about 8 mum square and the remaining four holes are formed at the corners of the square current injection region, for example, at the positions about 2 mum square away from the one hole to produce four light emitting spots.
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申请公布号 |
US2004219699(A1) |
申请公布日期 |
2004.11.04 |
申请号 |
US20040801821 |
申请日期 |
2004.06.22 |
申请人 |
FUJI XEROX CO., LTD.;FUMIO KOYAMA C/O TOKYO INSTITUTE OF TECHNOLOGY |
发明人 |
KOYAMA FUMIO;UEKI NOBUAKI |
分类号 |
H01S5/028;H01S5/042;H01S5/10;H01S5/183;(IPC1-7):H01L21/00;H01S3/08 |
主分类号 |
H01S5/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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